2012 IEEE International SOI Conference
1 - 4 October, 2012

OPTIONAL CLASSES

38th ANNUAL SHORT COURSE

Design Enablement for FDSOI, Including Planar and FinFET/Multi-Gate

Monday, October 1, 2012 (full day)

The one-day short course features presentations by industry and academia experts on FDSOI device physics, technology options, modeling and circuit design. The short course content offers a comprehensive perspective on the various elements required to enable a successful FDSOI design activity that will bring tremendous advantages in the field of low-power and high-performance CMOS applications.

6th ANNUAL FUNDAMENTALS CLASS

Multi-gate FET Fundamentals: Device Physics and Process

Wednesday, October 3, 2012 (half day)

The Fundamentals Class will provide attendees a comprehensive overview of device physics and generalized process flow for the multi-gate FETs such as double-gate, FinFET and nanowires, comparing it to the more traditional single-gate planar transistor that was the workhorse for the semiconductor industry for decades. This is especially suitable for graduate students who will enter the semiconductor industry and engineers who are in the design side of the field